PART |
Description |
Maker |
IRC530-007 IRC540PBF |
IRFL210, SiHFL210 Power MOSFET Trans MOSFET N-CH 100V 28A 5-Pin(5 Tab) TO-220
|
Vishay Siliconix
|
2N6901 |
Trans MOSFET N-CH 100V 1.69A 3-Pin TO-39
|
New Jersey Semiconductor
|
FDS3672 FDS3672NL |
N-Channel PowerTrench MOSFET 100V/ 7.5A/ 22m N-Channel PowerTrench MOSFET 100V, 7.5A, 22mз Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 7.5A, 0.022 Ohm @ Vgs = 10V, SO-8 Package
|
FAIRCHILD[Fairchild Semiconductor]
|
FDP3682 FDB3682 FDP3682NL |
N-Channel PowerTrench MOSFET 100V/ 32A/ 36m N-Channel PowerTrench MOSFET 100V, 32A, 36mз Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 32A, 0.036 ohm @ Vgs = 10V, TO-220 Package
|
Fairchild Semiconductor
|
IRF5Y9540CM |
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, P-CHANNEL POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package 34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A) Avalanche Energy Ratings
|
IRF[International Rectifier]
|
JANS2N6849 JANTXV2N6849 JANTX2N6849 2489 IRFF9130 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package HEXFET? TRANSISTORS From old datasheet system POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
|
IRF[International Rectifier]
|
SUP15P01-52 SUB15P01-52 |
Trans MOSFET P-CH 8V 15A 3-Pin(3 Tab) TO-220AB Trans MOSFET P-CH 8V 15A 3-Pin(2 Tab) TO-263
|
Vishay Siliconix
|
IRF7452 IRF7452TR |
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=100V, Rds(on)max=0.060ohm, Id=4.5A)
|
IRF[International Rectifier]
|
IRC540 |
Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.077ohm,身份证\u003d 28A条) Power MOSFET(Vdss=100V/ Rds(on)=0.077ohm/ Id=28A) Hexfet? Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier, Corp. IRF[International Rectifier]
|